Tibor Grasser

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Thomas Aichinger

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Publications

2024
[c49]
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Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3
2023
[c46]
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  - conf/irps/FeilWRBASRGG23
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Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10
2022
[c41]
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  - conf/irps/FeilRKAGG22
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Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS 2022: 3
2020
[c32]
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  - conf/irps/BerensWPARSG20
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Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser:
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS 2020: 1-7
2018
[c18]
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  - conf/irps/PuschkarskyGAGR18
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Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger:
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS 2018: 3
2013
[j23]
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Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53(7): 937-946 (2013)
2011
[j17]
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  - journals/mr/PobegenAGN11
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Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel:
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51(9-11): 1530-1534 (2011)
2008
[j12]
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Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48(8-9): 1178-1184 (2008)

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