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Publication search results
found 42 matches
- 2023
- Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach:
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications. ESSDERC 2023: 113-116 - Jelle H. T. Bakker, Mark S. Oude Alink, Jurriaan Schmitz, Bram Nauta:
Characterisation of Photodiodes in 22 nm FDSOI at 850 nm. ESSDERC 2023: 65-68 - Michele Basso, Marco Sambi, Andrea Marcovati:
Characterization and Modeling of High Voltage MOS Robustness During Recirculation in Smart Power technologies. ESSDERC 2023: 156-159 - Raphael Behrle, Martien I. Den Hertog, Alois Lugstein, Walter M. Weber, Masiar Sistani:
Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits. ESSDERC 2023: 37-40 - Quentin Berlingard, M. Moulin, J.-P. Michel, T. Fache, I. Charlet, C. Plantier, Z. Chalupa, Jose Lugo-Alvarez, Jean-Pierre Raskin, Louis Hutin, Mikaël Cassé:
RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature. ESSDERC 2023: 148-151 - Noémie Bidoul, Teodor Rosca, Adrian M. Ionescu, Denis Flandre:
Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron. ESSDERC 2023: 81-84 - Mingcheng Chang, Zaid Al-Husseini, Shafi Syed, Wafa Arfaoui, Tianbing Chen, Andreas Knorr:
22FDX® Device Optimization for mmW PA. ESSDERC 2023: 105-108 - Po-Chih Chen, Yi-Ting Wu, Meng-Hsueh Chiang:
Performance Comparison of SRAM Designs Implemented with Silicon-On-Insulator Nanosheet Transistors and Bulk FinFETs. ESSDERC 2023: 73-76 - S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, Tulio Chaves de Albuquerque, Frederic Monsieur, H. Audouin, C. A. Legrand, C. Diouf, J. Azevedo Goncalves, C. Belem Goncalves, C. Durand, N. Vulliet, L. Berthier, Emeline Souchier, P. Garcia, S. Jan, M. Hello, M. L. Rellier, Patrick Scheer, B. Duriez, Xavier Garros, T. Bordignon, F. Paillardet, Pascal Chevalier:
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications. ESSDERC 2023: 101-104 - Hannes Dahlberg, Lars-Erik Wernersson:
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films. ESSDERC 2023: 33-36 - T. Dubreuil, S. Barraud, J.-M. Pedini, J.-M. Hartmann, F. Boulard, A. Sarrazin, A. Gharbi, Johannes Sturm, A. Lambert, S. Martin, Niccolo Castellani, A. Anotta, A. Magalhaes-Lucas, Aurelie Souhaite, François Andrieu:
Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. ESSDERC 2023: 117-120 - Rana ElKashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais:
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. ESSDERC 2023: 152-155 - G. Elbaz, Mikaël Cassé, V. Labracherie, G. Roussely, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, F. Balestro, Matias Urdampilleta, Tristan Meunier, Bruna Cardoso Paz:
Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications. ESSDERC 2023: 5-8 - Pablo Fernández-Peramo, Juan A. Leñero-Bardallo, María López-Carmona, Ángel Rodríguez-Vázquez:
A Model for the Open-Circuit Voltage Dependence on Temperature for Integrated Diodes. ESSDERC 2023: 49-52 - Fernando García-Redondo, S. Rao, M. Gupta, Manu Perumkunnil, Y. Xiang, D. Abdi, Simon Van Beek, S. Couet, Marie Garcia Bardon:
STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process Nodes. ESSDERC 2023: 97-100 - Daniel Gheysens, Alain Fleury, Stéphane Monfray, Frédéric Gianesello, Philippe Cathelin, Jean-François Robillard, David Troadec, Emmanuel Dubois:
Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities? ESSDERC 2023: 109-112 - M. Gupta, Siddharth Rao, Gouri Sankar Kar, S. Couet:
Magnetic Domain Wall Memory: A DTCO study for Memory Applications. ESSDERC 2023: 41-44 - Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa:
40nm SONOS Embedded Select in Trench Memory. ESSDERC 2023: 21-24 - Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar:
NPN Si/SiGe memory selector with non-linearity>105 and ON-current>6MA/cm2. ESSDERC 2023: 164-167 - Ekin Kizilkan, Utku Karaca, V. Pesic, M.-J. Lee, Claudio Bruschini, A. J. SpringThorpe, A. W. Walker, C. Flueraru, Oliver J. Pitts, Edoardo Charbon:
Extended Temperature Modeling of InGaAs/InP SPADs. ESSDERC 2023: 140-143 - Tom Klauner, Iman Sabri Alirezaei, Nicolas Roisin, Nicolas André, Denis Flandre:
SPICE Model of SPAD Transient Intrinsic Response Validated using Mixed-Mode TCAD Simulations. ESSDERC 2023: 136-139 - Jung-Soo Ko, Zichen Zhang, Sol Lee, Marc Jaikissoon, Robert K. A. Bennett, Kwanpyo Kim, Andrew C. Kummel, Prabhakar Bandaru, Eric Pop, Krishna C. Saraswat:
Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2. ESSDERC 2023: 1-4 - W.-C. Lin, H.-P. Huang, Kuo-Hsing Kao, Meng-Hsueh Chiang, Darsen D. Lu, Wei-Chou Hsu, Yeong-Her Wang, William Cheng-Yu Ma, Hann-Huei Tsai, Y.-J. Lee, H.-L. Chiang, J.-F. Wang, Iuliana P. Radu:
MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization. ESSDERC 2023: 9-12 - Meghna Madhusudan, Jitesh Poojary, Arvind K. Sharma, Ramprasath S, Kishor Kunal, Sachin S. Sapatnekar, Ramesh Harjani:
Understanding Distance-Dependent Variations for Analog Circuits in a FinFET Technology. ESSDERC 2023: 69-72 - Yuya Matsuzawa, Yuki Ohnishi, Kazuhiro Katono, Yusuke Muto, Takayuki Tsukagoshi, Hiroki Tokuhira, Kei Sakamoto, Hisakazu Matsumori, Hiroyuki Ode, Shosuke Fujii, Hide Tanaka, Takeshi Fujimaki:
One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond. ESSDERC 2023: 25-28 - J. L. Mazzola, M. Greatti, C. Monzio Compagnoni, Alessandro S. Spinelli, V. Marano, M. Lauria, D. Paci, F. Speroni, Gerardo Malavena:
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics. ESSDERC 2023: 1-4 - Markus Müller, Christoph Weimer, Michael Schröter:
Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2. ESSDERC 2023: 45-48 - Tamanna Nazeer, Sheikh Aamir Ahsan:
NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D Materials. ESSDERC 2023: 53-56 - Kenneth K. O, Muhammad Awais, Salahuddin Tariq, Matthew Stark, Suprovo Ghosh, Farooq Muhammad Musab, Behnam Pouya, Haidong Guo, Goutham Murugesan, Suhwan Lee, Sarfraz Shariff, Walter Sosa Portillo, Frank Zhang:
Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for Transistors. ESSDERC 2023: 125-131 - Elisabetta Palumbo, Alessandro Motta, Elisa Petroni, Daniele Gallinari, Annalisa Gilardini, Amos Galbiati, Massimo Borghi, Roberto Annunziata, Andrea Redaelli:
ePCM reliability improvement through active material carbon implantation. ESSDERC 2023: 29-32
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