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Publication search results
found 84 matches
- 2022
- Md Tashfiq Bin Kashem
, Jake Scoggin, Helena Silva
, Ali Gokirmak
:
Finite Element Analysis of GeTe / Ge2Sb2Te5 Interfacial Phase Change Memory Devices. NVMTS 2022: 1-5 - Seung-Yeol Oh, Hojung Jang, Hyunsang Hwang:
Effects of an interfacial dead layer on the ferroelectric HfZrOx films for low thermal budget. NVMTS 2022: 1-5 - Koji Sakui, Masakazu Kakumu, Nozomu Harada:
Dynamic Flash Memory with Fast Block Refresh. NVMTS 2022: 1-5 - 20th Non-Volatile Memory Technology Symposium, NVMTS 2022, Stanford, CA, USA, December 7-9, 2022. IEEE 2022, ISBN 979-8-3503-0109-0 [contents]
- 2019
- Dieter Bimberg, Thomas Mikolajick
, Xavier Wallart:
Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail? NVMTS 2019: 1-4 - Alessandro Fumarola, Yusuf Leblebici, Pritish Narayanan, Robert M. Shelby, L. L. Sanchez, Geoffrey W. Burr, Kibong Moon, J. Jang, Hyunsang Hwang, Severin Sidler:
Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. NVMTS 2019: 1-6 - Alexandre Levisse, Marco Rios, William Andrew Simon, Pierre-Emmanuel Gaillardon, David Atienza:
Functionality Enhanced Memories for Edge-AI Embedded Systems. NVMTS 2019: 1-4 - Patrick D. Lomenzo
, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick
, Uwe Schroeder
, Benjamin Max:
Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. NVMTS 2019: 1-8 - Fei Mo
, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi:
Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method. NVMTS 2019: 1-5 - Nikolaos Papandreou, Nikolas Ioannou, Thomas P. Parnell, Roman A. Pletka
, Milos Stanisavljevic, Radu Stoica, Sasa Tomic, Haralampos Pozidis:
Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspect. NVMTS 2019: 1-4 - Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau
, Vincenzo Della Marca, Adnan Harb:
True random number generation exploiting SET voltage variability in resistive RAM memory arrays. NVMTS 2019: 1-5 - Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS 2019: 1-4 - Ryo Tamura, N. Watanabe, Hiroki Koike, Hideo Sato, Shoji Ikeda
, Tetsuo Endoh, Soshi Sato:
A novel memory test system with an electromagnet for STT-MRAM testing. NVMTS 2019: 1-4 - Panni Wang, Zheng Wang, Nujhat Tasneem, Jar Hur, Asif Islam Khan, Shimeng Yu
:
Investigating Dynamic Minor Loop of Ferroelectric Capacitor. NVMTS 2019: 1-4 - 19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, NC, USA, October 28-30, 2019. IEEE 2019, ISBN 978-1-7281-4431-3 [contents]
- 2018
- Rana Alhalabi, Etienne Nowak, Ioan Lucian Prejbeanu
, Gregory di Pendina
:
High density SOT-MRAM memory array based on a single transistor. NVMTS 2018: 1-3 - Irem Boybat, S. R. Nandakumar, Manuel Le Gallo
, Bipin Rajendran, Yusuf Leblebici, Abu Sebastian
, Evangelos Eleftheriou:
Impact of conductance drift on multi-PCM synaptic architectures. NVMTS 2018: 1-4 - Solomon Amsalu Chekol
, Jongmyung Yoo, Hyunsang Hwang:
Thermally Stable Te-based Binary OTS Device for Selector Application. NVMTS 2018: 1-4 - Yi-Shao Chen, Zongwei Wang
, Zhihong Zhang, Li Wang, Yichen Fang, Jen-Chung Lou, Kaihui Liu, Jintong Xu, Yimao Cai, Ru Huang:
Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer. NVMTS 2018: 1-3 - Shouhei Fukuyama, Shinpei Matsuda, Ryutaro Yasuhara, Ken Takeuchi:
Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify. NVMTS 2018: 1-4 - Carsten Funck, C. Baumer, Regina Dittmann, Manfred Martin
, Rainer Waser, Stephan Menzel:
Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices. NVMTS 2018: 1-4 - Andreas Kindsmüller, Alexander Schönhals, Stephan Menzel, Regina Dittmann, Rainer Waser, Dirk J. Wouters:
The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices. NVMTS 2018: 1-4 - Reika Kinoshita, Chihiro Matsui, Shinpei Matsuda, Yutaka Adachi, Ken Takeuchi:
Maximizing Peformance/cost Figure of Merit of Storage-type SCM based SSD by Adding Small Capacity of Memory-type SCM. NVMTS 2018: 1-6 - Sandip Lashkare
, A. Bhat, Pankaj Kumbhare, Udayan Ganguly:
Transient Joule Heating in PrMnO3 RRAM enables ReLU type Neuron. NVMTS 2018: 1-4 - Zong-You Luo, Ya-Jui Tsou, Yi-Cheng Dong, Ching Lu, Chee Wee Liu:
Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization. NVMTS 2018: 1-5 - Atsuya Suzuki, Chihiro Matsui, Ken Takeuchi:
Periodic Data Eviction Algorithm of SCM/NAND Flash Hybrid SSD with SCM Retention Time Constraint Capabilities at Extremely High Temperature. NVMTS 2018: 1-5 - Ryo Tamura, I. Mori, N. Watanabe, Hiroki Koike, Tetsuo Endoh:
Accurate error bit mode analysis of STT-MRAM chip with a novel current measurement module implemented to gigabit class memory test system. NVMTS 2018: 1-5 - Srinath Venkatesan, Marc Aoulaiche:
Overview of 3D NAND Technologies and Outlook Invited Paper. NVMTS 2018: 1-5 - Chikako Yoshida, Tomohiro Tanaka, Tadashi Ataka, Astushi Furuya:
Micromagnetic Study of Probabilistic Switching Behavior in Sub 20 nm-CoFeB/MgO Magnetic Tunnel Junction. NVMTS 2018: 1-5 - Zhizhen Yu, Yichen Fang, Zongwei Wang
, Yimao Cai, Ru Huang, Jintong Xu:
Margin Dependence on Array Size for Asymmetric Resistive Memory Cell. NVMTS 2018: 1-3
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