- Shunri Oda
:
Quantum dot devices: Technology vehicles for nanoscale physics and paths for future applications. ESSDERC 2016: 333-336 - Vikram Passi
, Amit Gahoi, Jasper Ruhkopf
, Satender Kataria
, F. Vaurette, Emiliano Pallecchi
, Henri Happy
, Max Christian Lemme:
Contact resistance Study of "edge-contacted" metal-graphene interfaces. ESSDERC 2016: 236-239 - Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot:
Analog performance of strained SOI nanowires down to 10K. ESSDERC 2016: 222-225 - Alessandro Pezzotta, C.-M. Zhang, Farzan Jazaeri, Claudio Bruschini
, Giulio Borghello, Federico Faccio, S. Mattiazzo, Andrea Baschirotto
, Christian C. Enz:
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. ESSDERC 2016: 146-149 - Enrico Piccinini, Massimo Rudan, Rossella Brunetti:
Closed-form transition rate in hopping conduction. ESSDERC 2016: 315-318 - Francesco Maria Puglisi
, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan
:
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC 2016: 252-255 - Bogdan C. Raducanu, Refet Firat Yazicioglu, Carolina Mora Lopez
, Marco Ballini
, Jan Putzeys, Shiwei Wang
, Alexandru Andrei, Marleen Welkenhuysen, Nick Van Helleputte
, Silke Musa, Robert Puers
, Fabian Kloosterman, Chris Van Hoof
, Srinjoy Mitra:
Time multiplexed active neural probe with 678 parallel recording sites. ESSDERC 2016: 385-388 - Martin Rau, Troels Markussen
, Enrico Caruso
, David Esseni
, Elena Gnani, Antonio Gnudi
, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani
, Andreas Schenk, Luca Selmi, Kurt Stokbro:
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC 2016: 184-187 - John A. Rogers:
Soft electronics for the human body. ESSDERC 2016: 21-22 - Tommaso Rollo, David Esseni
:
Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swing. ESSDERC 2016: 360-363 - Giovanni A. Salvatore
:
Soft and bio-degradable electronics: Technology challenges and future applications. ESSDERC 2016: 381-384 - Daniel S. Schneider
, Andreas Bablich, Max Christian Lemme:
Graphene / a-Si: H multispectral photodetectors. ESSDERC 2016: 287-290 - Uwe Schroeder
, Milan Pesic, Tony Schenk, Halid Mulaosmanovic
, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch
, Christopher Künneth
, Thomas Mikolajick
:
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC 2016: 364-368 - Alan C. Seabaugh, Cristobal Alessandri
, Mina Asghari Heidarlou, Hua-Min Li, Leitao Liu, Hao Lu, Sara Fathipour, Paolo Paletti
, Pratyush Pandey, Trond Ytterdal:
Steep slope transistors: Tunnel FETs and beyond. ESSDERC 2016: 349-351 - Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch
, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler
, Tibor Grasser
:
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC 2016: 428-431 - Severin Sidler
, Irem Boybat
, Robert M. Shelby, Pritish Narayanan, Jun-Woo Jang, Alessandro Fumarola, Kibong Moon, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W. Burr:
Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response. ESSDERC 2016: 440-443 - Anderson D. Smith, Karim Elgammal
, Xuge Fan, Max Christian Lemme
, Anna Delin, Frank Niklaus, Mikael Östling
:
Toward effective passivation of graphene to humidity sensing effects. ESSDERC 2016: 299-302 - Vice Sodan, Federica Lidia Teresa Maggioni, Herman Oprins, Steve Stoffels
, Martine Baelmans
, Ingrid De Wolf:
New fast distributed thermal model for analysis of GaN based power devices. ESSDERC 2016: 172-175 - Camillo Stefanucci, Pietro Buccella, Ehrenfried Seebacher, Alexander Steinmair, Maher Kayal, Jean-Michel Sallese:
Analysis of substrate currents propagation in HVCMOS technology. ESSDERC 2016: 319-322 - Matthias Steffen, Jay M. Gambetta, Jerry M. Chow:
Progress, status, and prospects of superconducting qubits for quantum computing. ESSDERC 2016: 17-20 - Christoforos G. Theodorou
, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo
:
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC 2016: 256-259 - Katsuhiro Tomioka
, Junichi Motohisa, Takashi Fukui:
Advances in steep-slope tunnel FETs. ESSDERC 2016: 397-402 - Ken Uchida, Tsunaki Takahashi:
Thermal-aware CMOS: Challenges for future technology and design evolutions. ESSDERC 2016: 150-153 - Antonio Valletta, Matteo Rapisarda
, Sabrina Calvi
, Luigi Mariucci
, Guglielmo Fortunato
:
A large signal non quasi static compact model for printed organic thin film transistors. ESSDERC 2016: 460-463 - Devin Verreck, Anne S. Verhulst, Bart Soree
, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
:
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC 2016: 412-415 - Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot:
Opportunities brought by sequential 3D CoolCube™ integration. ESSDERC 2016: 226-229 - Michele Visciarelli
, Antonio Gnudi
, Elena Gnani, Susanna Reggiani
:
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC 2016: 180-183 - Wolfgang A. Vitale, Michele Tamagnone, Clara F. Moldovan, Nicolas Emond, Emanuele A. Casu, Luca Petit
, Boris Le Drogoff, Mohamed Chaker, Juan R. Mosig, Adrian M. Ionescu:
Field-enhanced design of steep-slope VO2 switches for low actuation voltage. ESSDERC 2016: 352-355 - Amy Whitcombe, Scott Taylor, Martin Denham, Vladimir M. Milovanovic, Borivoje Nikolic
:
On-chip I-V variability and random telegraph noise characterization in 28 nm CMOS. ESSDERC 2016: 248-251 - Thomas Windbacher
, Alexander Makarov, Viktor Sverdlov
, Siegfried Selberherr
:
The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. ESSDERC 2016: 311-314