- Xue Li, Bill Plumb, Zhiqiang Wu:
WiFi leakage detection in LTE downlink for in-device interference avoidance. IET Circuits Devices Syst. 8(5): 397-405 (2014) - Bingo Wing-Kuen Ling, Charlotte Yuk-Fan Ho, Kok Lay Teo, Qingyun Dai:
Pulse design for ultra wideband impulse radio systems. IET Circuits Devices Syst. 8(5): 387-396 (2014) - Baojun Liu, Li Cai, Jing Zhu, Qiang Kang, Mingliang Zhang, Xiangye Chen:
On-chip readout circuit for nanomagnetic logic. IET Circuits Devices Syst. 8(1): 65-72 (2014) - Xuelian Liu, Mitchell R. LeRoy, Ryan Clarke, Michael Chu, H. O. Aquino, Srikumar Raman, Aamir Zia, Russell P. Kraft, John F. McDonald:
Design of BiCMOS SRAMs for high-speed SiGe applications. IET Circuits Devices Syst. 8(6): 487-498 (2014) - Pang-Jung Liu, Chung-Yi Ting:
Low-power buffer with voltage boosting and improved frequency compensation for liquid crystal display source drivers. IET Circuits Devices Syst. 8(4): 263-271 (2014) - Faiq Khalid Lodhi, Syed Rafay Hasan, Naeha Sharif, Nadra Ramzan, Osman Hasan:
Timing variation aware dynamic digital phase detector for low-latency clock domain crossing. IET Circuits Devices Syst. 8(1): 58-64 (2014) - Neophytos Lophitis, Marina Antoniou, Florin Udrea, Iulian Nistor, Martin Arnold, Tobias Wikström, Jan Vobecký:
Parameters influencing the maximum controllable current in gate commutated thyristors. IET Circuits Devices Syst. 8(3): 221-226 (2014) - Ioannis Mamounakis, Konstantinos Yiannopoulos, Georgios I. Papadimitriou, Emmanouel A. Varvarigos:
Optical network unit-based traffic prediction for Ethernet passive optical networks. IET Circuits Devices Syst. 8(5): 349-357 (2014) - Debashis Mandal, Pradip Mandal, T. K. Bhattacharyya:
Spur reducing architecture of frequency synthesiser using switched capacitors. IET Circuits Devices Syst. 8(4): 237-245 (2014) - Andrea De Marcellis, M.-Dolores Cubells-Beltrán, Càndid Reig Escriva, Jordi Madrenas, Boris Zadov, Eugene Paperno, Susana Cardoso, Paulo P. Freitas:
Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology. IET Circuits Devices Syst. 8(4): 291-300 (2014) - Mahmood Mohammed, Sanad Kawar, Khaldoon Abugharbieh:
Methodology for designing and verifying switched-capacitor sample and hold circuits used in data converters. IET Circuits Devices Syst. 8(4): 252-262 (2014) - Kumar Narendra, YewKok Tee:
Optimised high-efficiency Class E radio frequency power amplifier for wide bandwidth and high harmonics suppression. IET Circuits Devices Syst. 8(2): 82-89 (2014) - Gholamreza Nikandish, A. Yousefi, Ali Medi:
Stability analysis of broadband cascode amplifiers in the presence of inductive parasitic components. IET Circuits Devices Syst. 8(6): 469-477 (2014) - Wangqiang Niu, Wei Gu, Jianxin Chu, Aidi Shen:
Frequency splitting patterns in wireless power relay transfer. IET Circuits Devices Syst. 8(6): 561-567 (2014) - Václav Papez, Jirí Hájek, B. Kojecký:
Influence of surface states on the reverse and noise properties of silicon power diodes. IET Circuits Devices Syst. 8(3): 213-220 (2014) - Vlastimir D. Pavlovic, Jelena R. Djordjevic-Kozarov:
Ultra-selective spike multiplierless linear-phase two-dimensional FIR filter function with full Hilbert transform effect. IET Circuits Devices Syst. 8(6): 532-542 (2014) - Verica Radisavljevic-Gajic:
Non-linear integral control of photon power transients in optical communication networks with erbium-doped fibre amplifiers. IET Circuits Devices Syst. 8(5): 412-420 (2014) - Piotr Remlein:
Energy efficient continuous phase modulation signals for satellite intelligent transportation systems. IET Circuits Devices Syst. 8(5): 406-411 (2014) - Prabir Saha, Arindam Banerjee, Partha Bhattacharyya, Anup Dandapat:
Improved matrix multiplier design for high-speed digital signal processing applications. IET Circuits Devices Syst. 8(1): 27-37 (2014) - Iraj Sheikhian, Nando Kaminski, Stephan Voß, W. Scholz, E. Herweg:
Optimisation of the reverse conducting IGBT for zero-voltage switching applications such as induction cookers. IET Circuits Devices Syst. 8(3): 176-181 (2014) - Anoop Chandrika Sreekantan, Boby George, V. Jagadeesh Kumar:
Analysis of a tunnelling magneto-resistance-based angle transducer. IET Circuits Devices Syst. 8(4): 301-310 (2014) - Jesús Urresti, Salvador Hidalgo, David Flores, Daniel Fernández Hevia:
3.3 kV PT-IGBT with voltage-sensor monolithically integrated. IET Circuits Devices Syst. 8(3): 182-187 (2014) - John S. Vardakas, Ioannis D. Moscholios, Nizar Zorba, Michael D. Logothetis, Christos V. Verikoukis:
Delay analysis of converged optical-wireless networks with quality of service support. IET Circuits Devices Syst. 8(5): 339-348 (2014) - Umamaheswara Vemulapati, Nando Kaminski, Dieter Silber, Liutauras Storasta, Munaf Rahimo:
Reverse conducting-IGBTs initial snapback phenomenon and its analytical modelling. IET Circuits Devices Syst. 8(3): 168-175 (2014) - Xubo Wang, Anh Dinh, Daniel Teng:
3-10 GHz ultra wideband front-end transceiver in 0.13 μm complementary metal oxide semiconductor for low-power biomedical radar. IET Circuits Devices Syst. 8(4): 272-279 (2014) - Cheng-Wen Wei, Cheng-Chun Tsai, FanJiang Yi, Tian-Sheuan Chang, Shyh-Jye Jou:
Analysis and implementation of low-power perceptual multiband noise reduction for the hearing aids application. IET Circuits Devices Syst. 8(6): 516-525 (2014) - Christoph Werner, Benedikt Backs, Martin Wirnshofer, Doris Schmitt-Landsiedel:
Resilience and yield of flip-flops in future CMOS technologies under process variations and aging. IET Circuits Devices Syst. 8(1): 19-26 (2014) - A. Yousefi, Ali Medi:
Wide-band high-efficiency Ku-band power amplifier. IET Circuits Devices Syst. 8(6): 583-592 (2014) - Sigit Yuwono, Seok-Kyun Han, Giwan Yoon, Han-Jin Cho, Sang-Gug Lee:
Development of low-complexity all-digital frequency locked loop as 500 MHz reference clock generator for field-programmable gate array. IET Circuits Devices Syst. 8(2): 73-81 (2014) - Zhangming Zhu, Zheng Qiu, Yi Shen, Yintang Yang:
A 2.67 fJ/c.-s. 27.8 kS/s 0.35 V 10-bit successive approximation register analogue-to-digital converter in 65 nm complementary metal oxide semiconductor. IET Circuits Devices Syst. 8(6): 427-434 (2014)