- 2020
- Yutaro Yamaguchi, Keigo Nakatani, Shintaro Shinjo:
A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications. BCICTS 2020: 1-4 - Sherif S. Ahmed:
Trends in Imaging Radars Powered by Modern Silicon. BCICTS 2020: 1-4 - Abdulrahman A. Alhamed, Gabriel M. Rebeiz:
A 28-37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers. BCICTS 2020: 1-4 - Anton N. Atanasov, Mark S. Oude Alink
, Frank E. van Vliet:
Reverse Intermodulation in Multi-Tone Array Transmitters. BCICTS 2020: 1-4 - Joseph C. Bardin
:
Analog/Mixed-Signal Integrated Circuits for Quantum Computing. BCICTS 2020: 1-8 - Shuoqi Chen, Vipan Kumar, Yu Cao:
A High Efficiency 4-18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology. BCICTS 2020: 1-4 - Clifford D. Y. Cheon, Moon-Kyu Cho, Sunil G. Rao, Adilson S. Cardoso, Jeffrey D. Connor, John D. Cressler:
A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator A New Wideband, Low Insertion Loss SiGe Digital Step Attenuator. BCICTS 2020: 1-5 - Pilsoon Choi, Bugra Kanargi, Kenneth E. Lee, Chirn Chye Boon, Evelyn Wang, Chuan Seng Tan, Dimitri A. Antoniadis, Eugene A. Fitzgerald:
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications. BCICTS 2020: 1-4 - Michael Collisi, Michael Möller:
A 120 GS/s 2: 1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology. BCICTS 2020: 1-4 - Sri Navaneeth Easwaran
, Sunil Kashyap Kashyap, Deepak Sreedharan, R. Hubbard, V. Devarajan, W. Ray:
Configurable and Scalable High-Side or Low-Side Driver in BiCMOS with 20dBµV Emission at 88MHz. BCICTS 2020: 1-4 - Gregory M. Flewelling:
Broadband Reconfigurable Transceivers in SiGe. BCICTS 2020: 1-4 - Aniello Franzese, Mohamed Hussein Eissa, Thomas Mausolf, Dietmar Kissinger, Renato Negra, Andrea Malignaggi:
Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS. BCICTS 2020: 1-4 - Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka
:
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology. BCICTS 2020: 1-4 - Timothy M. Hancock, Steven Gross, James McSpadden, Lawrence Kushner, Jason Milne, Jon Hacker, Ryan Walsh, Craig Hornbuckle, Charles Campbell, Kevin Kobayashi:
The DARPA Millimeter Wave Digital Arrays (MIDAS) Program. BCICTS 2020: 1-4 - Mostafa Hosseini, Aydin Babakhani:
A Fully Integrated 20-500-GHz Coherent Detector with 2-Hz Frequency Resolution. BCICTS 2020: 1-4 - Vadim Issakov
, Andreas Werthof:
A 10 mW LNA with Temperature Compensation for 24 GHz Radar Applications in SiGe BiCMOS. BCICTS 2020: 1-4 - Xiaodi Jin
, Christoph Weimer
, Yaxin Zhang, Michael Schröter:
Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. BCICTS 2020: 1-4 - Teruo Jyo, Munehiko Nagatani, Minoru Ida, Miwa Mutoh, Hitoshi Wakita, Naoki Terao, Hideyuki Nosaka
:
An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT. BCICTS 2020: 1-4 - Sourabh Khandelwal
, Petra Hammes, Marek Schmidt-Szalowski, Amit Dikshit, Menno Clerk:
Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs. BCICTS 2020: 1-4 - Sourabh Khandelwal
, Brian Novak, Jordan Merkel, Ken A. Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert S. Howell:
SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch. BCICTS 2020: 1-4 - Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao:
18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA. BCICTS 2020: 1-4 - Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao, Jose Jimenez:
Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology. BCICTS 2020: 1-4 - Christian Koos, Sebastian Randel, Wolfgang Freude
, Thomas Zwick, Johann-Christoph Scheytt, Jeremy Witzens, M. Walther, Tobias Harter, Sandeep Ummethala, Clemens Kieninger, Heiner Zwickel, Pablo Marin-Palomo
, S. Muehlbrandt, Christoph Füllner, J. Schaefer, Sergiy Gudyriev, Andrea Zazzi, Juliana Müller, Axel Tessmann:
Photonic-Electronic Ultra-Broadband Signal Processing: Concepts, Devices, and Applications. BCICTS 2020: 1-3 - Seokchul Lee, Inchan Ju, Yunyi Gong, Adilson S. Cardoso, Jeffrey D. Connor, Moon-Kyu Cho, John D. Cressler:
Design of an 18-50 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier. BCICTS 2020: 1-4 - K. Moore, B. Green, S. Klingbeil, C. Rampley, P. Renaud, D. Burdeaux, D. Hill, C. Zhu, J. Wan, J. Finder, K. Kim, C. Gaw, T. Arnold, F. Vanaverbeke, R. Embar, P. Rashev, M. Masood:
High Performance 150 mm RF GaN Technology with Low Memory Effects. BCICTS 2020: 1-4 - Arya Moradinia, Rafael Perez Martinez, Jeffrey W. Teng
, Nelson Sepúlveda-Ramos
, Harrison Lee, John D. Cressler:
Circuit-Level Safe-Operating-Area of a High-Speed SiGe BiCMOS Wireline Driver. BCICTS 2020: 1-5 - Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor. BCICTS 2020: 1-4 - Lorenzo Paolozzi, Giuseppe Iacobucci, Pierpaolo Valerio:
Fast pixel sensors for ionizing particles integrated in SiGe BiCMOS. BCICTS 2020: 1-6 - Lukas Polzin
, Marcel van Delden
, Nils Pohl
, Klaus Aufinger, Thomas Musch:
A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider. BCICTS 2020: 1-4 - Edward Preisler:
A Commercial Foundry Perspective of SiGe BiCMOS Process Technologies. BCICTS 2020: 1-5