"Radiation-Hardened 0.3-0.9-V Voltage-Scalable 14T SRAM and Peripheral ..."

Yuanyuan Han et al. (2020)

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DOI: 10.1109/TVLSI.2019.2961736

access: closed

type: Journal Article

metadata version: 2020-04-09

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Yuanyuan Han, Xu Cheng, Jun Han, Xiaoyang Zeng:
Radiation-Hardened 0.3-0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-nm Technology for Space Applications. IEEE Trans. Very Large Scale Integr. Syst. 28(4): 1089-1093 (2020)

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