"Physics-based modeling of TID induced global static leakage in different ..."

Gennady I. Zebrev et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.03.014

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type: Journal Article

metadata version: 2024-10-06

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Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov, Maxim G. Drosdetsky:
Physics-based modeling of TID induced global static leakage in different CMOS circuits. Microelectron. Reliab. 84: 181-186 (2018)

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