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"Improved interfacial quality of GaAs metal-oxide-semiconductor device with ..."
Han-Han Lu et al. (2016)
- Han-Han Lu, Jing-Ping Xu, Lu Liu, Li-Sheng Wang, Pui To Lai, Wing Man Tang:
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer. Microelectron. Reliab. 56: 17-21 (2016)
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