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"A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k ..."

Feng Ji et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.12.004

access: closed

type: Journal Article

metadata version: 2023-07-06

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Feng Ji, Jing-Ping Xu, Lu Liu, Wing Man Tang, Pui To Lai:
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. Microelectron. Reliab. 57: 24-33 (2016)

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