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"Reliability study of power RF LDMOS device under thermal stress."
Mohamed Ali Belaïd et al. (2007)
- Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38(2): 164-170 (2007)
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