"A multigigabit DRAM technology with 6F2 open-bitline cell, ..."

Tsugio Takahashi et al. (2001)

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DOI: 10.1109/4.962294

access: closed

type: Journal Article

metadata version: 2022-07-07

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Tsugio Takahashi, Tomonori Sekiguchi, Riichiro Takemura, Seiji Narui, Hiroki Fujisawa, Shinichi Miyatake, Makoto Morino, Koji Arai, Satoru Yamada, Shoji Shukuri, Masayuki Nakamura, Yoshitaka Tadaki, Kazuhiko Kajigaya, Katsutaka Kimura, Kiyoo Itoh:
A multigigabit DRAM technology with 6F² open-bitline cell, distributed overdriven sensing, and stacked-flash fuse. IEEE J. Solid State Circuits 36(11): 1721-1727 (2001)

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