Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"A 0.13 µm SiGe BiCMOS Technology Featuring ..."

Holger Rücker et al. (2010)

> Home

Details and statistics

DOI: 10.1109/JSSC.2010.2051475

access: closed

type: Journal Article

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/jssc/RuckerHWBBDFFGHKKMMSSSSSTWY10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/jssc/RuckerHWBBDFFGHKKMMSSSSSTWY10
Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto:
A 0.13 µm SiGe BiCMOS Technology Featuring f_T/f_max of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.