default search action
"5.6 Mb/mm2 1R1W 8T SRAM Arrays Operating Down to 560 mV ..."
Jaydeep P. Kulkarni et al. (2017)
- Jaydeep P. Kulkarni, John Keane, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang:
5.6 Mb/mm2 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 nm FinFET CMOS Technology. IEEE J. Solid State Circuits 52(1): 229-239 (2017)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.