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"A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s ..."

Chulbum Kim et al. (2012)

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DOI: 10.1109/JSSC.2012.2185341

access: closed

type: Journal Article

metadata version: 2020-08-30

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  - journals/jssc/KimRLKLJSJKLLKCYCJPHSKLJ12
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  persistent URL:
  - https://dblp.org/rec/journals/jssc/KimRLKLJSJKLLKCYCJPHSKLJ12
Chulbum Kim, Jinho Ryu, Tae-Sung Lee, Hyunggon Kim, Jaewoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, Inyoul Lee, Dooseop Lee, Pansuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Kwang-Il Park, Jin-Man Han, Duheon Song, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. IEEE J. Solid State Circuits 47(4): 981-989 (2012)

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