"Design of Low Power with Expanded Noise Margin Subthreshold 12T SRAM Cell ..."

Harekrishna Kumar, V. K. Tomar (2021)

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DOI: 10.1142/S0218126621501061

access: closed

type: Journal Article

metadata version: 2021-06-15

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Harekrishna Kumar, V. K. Tomar:
Design of Low Power with Expanded Noise Margin Subthreshold 12T SRAM Cell for Ultra-Low Power Devices. J. Circuits Syst. Comput. 30(6): 2150106:1-2150106:30 (2021)

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