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"InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with ..."

Takuya Hoshi et al. (2019)

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DOI: 10.1587/ELEX.16.20181125

access: open

type: Journal Article

metadata version: 2021-02-12

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  - journals/ieiceee/HoshiKSKIM19
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  - https://dblp.org/rec/journals/ieiceee/HoshiKSKIM19
Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki:
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz f_max and 5.4-V breakdown voltage. IEICE Electron. Express 16(3): 20181125 (2019)

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