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"CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance ..."

Ghavam G. Shahidi et al. (1995)

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DOI: 10.1147/RD.391.0229

access: closed

type: Journal Article

metadata version: 2022-06-02

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  - journals/ibmrd/ShahidiWCFMACCNADSPD95
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  - https://dblp.org/rec/journals/ibmrd/ShahidiWCFMACCNADSPD95
Ghavam G. Shahidi, James D. Warnock, James Comfort, Stephen E. Fischer, Patricia A. McFarland, Alexandre Acovic, Terry I. Chappell, Barbara A. Chappell, Tak H. Ning, Carl J. Anderson, Robert H. Dennard, J. Y.-C. Sun, Michael R. Polcari, Bijan Davari:
CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications. IBM J. Res. Dev. 39(1-2): 229-244 (1995)

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