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"Defect evolution in GaN thin film heterogeneously integrated with ..."

Hangning Shi et al. (2023)

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DOI: 10.1007/S11432-022-3668-0

access: closed

type: Journal Article

metadata version: 2024-03-11

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  - journals/chinaf/ShiYDLQYHWCWXMSHWZXHYO23
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  - https://dblp.org/rec/journals/chinaf/ShiYDLQYHWCWXMSHWZXHYO23
Hangning Shi, Ailun Yi, Jiaxin Ding, Xudong Liu, Qingcheng Qin, Juemin Yi, Junjie Hu, Miao Wang, Demin Cai, Jianfeng Wang, Ke Xu, Fengwen Mu, Tadatomo Suga, René Heller, Mao Wang, Shengqiang Zhou, Wenhui Xu, Kai Huang, Tiangui You, Xin Ou:
Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Sci. China Inf. Sci. 66(11) (2023)

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