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"A 135.6Tbps/W 2R2W SRAM with 12T Logic Bit-cell with Vmin Down to 335mV ..."
Nail Etkin Can Akkaya et al. (2022)
- Nail Etkin Can Akkaya, Gary Chan, Hung-Jen Liao, Yih Wang
, Jonathan Chang:
A 135.6Tbps/W 2R2W SRAM with 12T Logic Bit-cell with Vmin Down to 335mV Targeted for Machine-Learning Applications in 6nm FinFET CMOS Technology. VLSI Technology and Circuits 2022: 110-111
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