![](https://dblp.uni-trier.de/img/logo.ua.320x120.png)
![](https://dblp.uni-trier.de/img/dropdown.dark.16x16.png)
![](https://dblp.uni-trier.de/img/peace.dark.16x16.png)
Остановите войну!
for scientists:
![search dblp search dblp](https://dblp.uni-trier.de/img/search.dark.16x16.png)
![search dblp](https://dblp.uni-trier.de/img/search.dark.16x16.png)
default search action
"High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed ..."
Pouya Hashemi et al. (2015)
- Pouya Hashemi, Takashi Ando, Karthik Balakrishnan, John Bruley, Sebastian U. Engelmann, John A. Ott, Vijay Narayanan
, D.-G. Park, Renee T. Mo, Effendi Leobandung:
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. VLSIC 2015: 16-
![](https://dblp.uni-trier.de/img/cog.dark.24x24.png)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.