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"A 20ns-write 45ns-read and 1014-cycle endurance memory module ..."

Shuhei Maeda et al. (2018)

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DOI: 10.1109/ISSCC.2018.8310395

access: closed

type: Conference or Workshop Paper

metadata version: 2018-03-14

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  dblp key:
  - conf/isscc/MaedaOFYIAAMKOF18
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  - https://dblp.org/rec/conf/isscc/MaedaOFYIAAMKOF18
Shuhei Maeda, Satoru Ohshita, Kazuma Furutani, Yuto Yakubo, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda, Masahiro Fujita, Shunpei Yamazaki:
A 20ns-write 45ns-read and 10¹⁴-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors. ISSCC 2018: 484-486

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