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"A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using ..."

Jung-Sik Kim et al. (2011)

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DOI: 10.1109/ISSCC.2011.5746413

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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  dblp key:
  - conf/isscc/KimOLLHHNMKPRPKKKBCJHLKCJ11
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  - https://dblp.org/rec/conf/isscc/KimOLLHHNMKPRPKKKBCJHLKCJ11
Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun:
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. ISSCC 2011: 496-498

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