"Power noise in 14, 10, and 7 nm FinFET CMOS technologies."

Ravi Patel, Eby G. Friedman, Praveen Raghavan (2016)

> Home

Details and statistics

DOI: 10.1109/ISCAS.2016.7527164

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/iscas/PatelFR16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/iscas/PatelFR16
Ravi Patel, Eby G. Friedman, Praveen Raghavan:
Power noise in 14, 10, and 7 nm FinFET CMOS technologies. ISCAS 2016: 37-40

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.