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"A practical hafnium-oxide memristor model suitable for circuit design and ..."

Sherif Amer et al. (2017)

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DOI: 10.1109/ISCAS.2017.8050790

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-26

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  dblp key:
  - conf/iscas/AmerSRBC17
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Sherif Amer, Sagarvarma Sayyaparaju, Garrett S. Rose, Karsten Beckmann, Nathaniel C. Cady:
A practical hafnium-oxide memristor model suitable for circuit design and simulation. ISCAS 2017: 1-4

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