"Characterization and reliability of III-V gate-all-around MOSFETs."

Mengwei Si et al. (2015)

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DOI: 10.1109/IRPS.2015.7112723

access: closed

type: Conference or Workshop Paper

metadata version: 2019-05-31

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Mengwei Si, SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye:
Characterization and reliability of III-V gate-all-around MOSFETs. IRPS 2015: 4

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