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"Trapping characteristics and parametric shifts in lateral GaN HEMTs with ..."

M. P. King et al. (2015)

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DOI: 10.1109/IRPS.2015.7112689

access: closed

type: Conference or Workshop Paper

metadata version: 2022-05-09

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M. P. King, Jeramy Ray Dickerson, S. DasGupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios:
Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. IRPS 2015: 2

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