"Reliability Testing of SiC MOS Devices at 500°C."

Ayayi C. Ahyi et al. (2019)

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DOI: 10.1109/IRPS.2019.8720571

access: closed

type: Conference or Workshop Paper

metadata version: 2023-08-27

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Ayayi C. Ahyi, Sarit Dhar, Zeynep Dilli, Akin Akturk, Neil Goldsman, A. Ghanbari:
Reliability Testing of SiC MOS Devices at 500°C. IRPS 2019: 1-4

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