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"Proposal of P-Channel FE NAND with High Drain Current and Feasible ..."
Song-Hyeon Kuk et al. (2023)
- Song-Hyeon Kuk, Jae-Hoon Han, Bong Ho Kim, Junpyo Kim, Sang-Hyeon Kim:
Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. IMW 2023: 1-4
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