Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Proposal of P-Channel FE NAND with High Drain Current and Feasible ..."

Song-Hyeon Kuk et al. (2023)

> Home

Details and statistics

DOI: 10.1109/IMW56887.2023.10145967

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-16

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/imw2/KukHKKK23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/imw2/KukHKKK23
Song-Hyeon Kuk, Jae-Hoon Han, Bong Ho Kim, Junpyo Kim, Sang-Hyeon Kim:
Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. IMW 2023: 1-4

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.