"Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D ..."

Soochan Chung et al. (2023)

> Home

Details and statistics

DOI: 10.1109/IMW56887.2023.10145937

access: closed

type: Conference or Workshop Paper

metadata version: 2023-07-28

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/imw2/ChungKLKTSLPLNA23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/imw2/ChungKLKTSLPLNA23
Soochan Chung, Dong-Hyeon Ko, Joonsung Lim, Kyungmoon Kim, Sejie Takaki, Yujeong Seo, Byoungil Lee, Sejun Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur:
Process Improvements for 7^th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production. IMW 2023: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.