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"Underlap engineered eight-transistor SRAM cell for stronger data stability ..."
Shairfe Muhammad Salahuddin, Volkan Kursun (2013)
- Shairfe Muhammad Salahuddin, Volkan Kursun:
Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumption. ICECS 2013: 25-28
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