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"Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace ..."

Aibin Yan et al. (2022)

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DOI: 10.1145/3526241.3530312

access: closed

type: Conference or Workshop Paper

metadata version: 2022-06-22

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  - conf/glvlsi/YanHXCZHGW22
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  - https://dblp.org/rec/conf/glvlsi/YanHXCZHGW22
Aibin Yan, Zhihui He, Jing Xiang, Jie Cui, Yong Zhou, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen:
Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace Applications. ACM Great Lakes Symposium on VLSI 2022: 261-266

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