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Lei Jiang 0013
Person information
- affiliation: Intel Corporation, Hillsboro, OR, USA
- affiliation: University of Michigan, Ann Arbor, MI, USA
Other persons with the same name
- Lei Jiang — disambiguation page
- Lei Jiang 0001
— Indiana University Bloomington, USA
- Lei Jiang 0002 — University of Toronto, Canada
- Lei Jiang 0003
— University of Chinese Academy of Sciences, Beijing, China
- Lei Jiang 0004 — West Virginia University, Morgantown, WV, USA
- Lei Jiang 0005 — Fraunhofer Inst. for Telecommun., Heinrich Hertz Inst., Berlin, Germany
- Lei Jiang 0006 — NEC, China
- Lei Jiang 0007
— Hunan University of Science and Technology, Xiangtan, China
- Lei Jiang 0008 — Autonomous University of Barcelona, Spain
- Lei Jiang 0009 — PLA University of Science and Technology, Nanjing, China
- Lei Jiang 0010 — Louisiana State University, Baton Rouge, LA, USA
- Lei Jiang 0011 — CAS, Institute of Electrical Engineering, Beijing, China
- Lei Jiang 0012 — CAS, Institute of Remote Sensing and Digital Earth, Beijing, China
- Lei Jiang 0014 — Alcatel-Lucent Shanghai Bell, Shanghai, China
- Lei Jiang 0015
— Northwestern Polytechnical University, Xi'an, China
- Lei Jiang 0016 — Donghua University, Shanghai, China
- Lei Jiang 0017
— University of Newcastle, School of DCIT, Callaghan, NSW, Australia
- Lei Jiang 0018
— Nanjing University of Information Science and Technology, Institute of Optoelectronics, China
- Lei Jiang 0019 — China North Vehicle Research Institute, Beijing, China (and 1 more)
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2010 – 2019
- 2017
- [j2]Zhanping Chen
, Sarvesh H. Kulkarni, Vincent E. Dorgan, Salil Manohar Rajarshi, Lei Jiang, Uddalak Bhattacharya:
A 0.9-μm2 1T1R Bit Cell in 14-nm High-Density Metal Fuse Technology for High-Volume Manufacturing and In-Field Programming. IEEE J. Solid State Circuits 52(4): 933-939 (2017) - 2010
- [j1]Sarvesh H. Kulkarni, Zhanping Chen, Jun He, Lei Jiang, Brian Pedersen, Kevin Zhang:
A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μ m 2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS. IEEE J. Solid State Circuits 45(4): 863-868 (2010)
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last updated on 2024-08-21 21:29 CEST by the dblp team
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