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Michael S. Obrecht

Michael S. O'brecht

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affiliation:
affiliation: University of Waterloo, VLSI Research Group, Department of Electrical and Computer Engineering, ON, Canada
affiliation: Russian Academy of Sciences, Institute of Pure and Applied Mechanics, Novosibirsk, Russia

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Journal Articles

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2023
[j6]
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Michael S. Obrecht:
Simple Offset Elimination Technique for Two-Wire Measurements. IEEE Instrum. Meas. Mag. 26(5): 45-50 (2023)
2004
[j5]
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Oleg Semenov, Michael S. Obrecht, Manoj Sachdev:
Evaluation of STI degradation using temperature dependence of leakage current in parasitic STI MOSFET. Microelectron. Reliab. 44(9-11): 1751-1755 (2004)
2000
[j4]
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Abdellatif Bellaouar, Michael S. O'brecht, Amr M. Fahim, Mohamed I. Elmasry:
Low-power direct digital frequency synthesis for wireless communications. IEEE J. Solid State Circuits 35(3): 385-390 (2000)
1998
[j3]
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Michael S. Obrecht, Edwin L. Heasell, Jirí Vlach, Mohamed I. Elmasry:
Transient Phenomena in High Speed Bipolar Devices. VLSI Design 8(1-4): 475-480 (1998)
1995
[j2]
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Michael S. Obrecht, Mohamed I. Elmasry, Edwin L. Heasell:
TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 14(4): 447-458 (1995)
1994
[j1]
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Muhammad E. S. Elrabaa, Michael S. Obrecht, Mohamed I. Elmasry:
Novel low-voltage low-power full-swing BiCMOS circuits. IEEE J. Solid State Circuits 29(2): 86-94 (1994)

Conference and Workshop Papers

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2000
[c3]
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Eyad Abou-Allam, Tajinder Manku, Michele Ting, Michael S. Obrecht:
Impact of technology scaling on CMOS RF devices and circuits. CICC 2000: 361-364
1999
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Tajinder Manku, Michael S. Obrecht, Yi Lin:
RF simulations and physics of the channel noise parameters within MOS transistors. CICC 1999: 369-372
[c1]
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Abdellatif Bellaouar, Michael S. Obrecht, Amr M. Fahim, Mohamed I. Elmasry:
A low-power direct digital frequency synthesizer architecture for wireless communications. CICC 1999: 593-596

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