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ORCIDJeong-Soo Park 0005
Person information
- affiliation: SK hynix Inc., Memory Research and Development Division, Icheon, South Korea
Other persons with the same name
- Jeong-Soo Park (aka: Jeongsoo Park) — disambiguation page
- Jeongsoo Park 0001 (aka: Jeong-Soo Park 0001) — Seoul National University, Music and Audio Research Group, Seoul, South Korea
- Jeong-Soo Park 0002 (aka: Jeongsoo Park 0002) — Hoseo University, Asan, South Korea
- Jeong-Soo Park 0003
![[0000-0002-8460-4869]](https://dblp.uni-trier.de/img/orcid-mark.12x12.png "0000-0002-8460-4869")
(aka: Jeongsoo Park 0003) — Chonnam National University, Department of Statistics, Gwangju, South Korea - Jeong-Soo Park 0004 (aka: Jeongsoo Park 0004) — Samsung Electronics (and 1 more)
- Jeongsoo Park 0006 (aka: Jeong-Soo Park 0006) — ETH Zurich, Switzerland (and 2 more)
- Jeongsoo Park 0007 — Sungkyunkwan University, Department of Electronic and Electrical Engineering, Suwon, South Korea
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2010 – 2019
- 2012
[j3]Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. Microelectron. Reliab. 52(9-10): 1901-1904 (2012)- [j2]Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1905-1908 (2012) - [j1]Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1949-1952 (2012)
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