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Takeshi Shundo

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2023
[c1]
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Noritaka Ishihara, Yusuke Shimada, Takamitsu Ochi, Satoshi Seto, Haruki Matsuo, Hiroki Yamashita, Sho Morita, Masafumi Ukishima, K. Uejima, Yusuke Arayashiki, Suzuka Kajiwara, Akiyuki Murayama, Katsuya Nishiyama, Kikuko Sugimae, Shinji Mori, Yuta Saito, Takeshi Shundo, Aki Maeda, Hiroyuki Kamiya, Yasuhiro Uchiyama, Makoto Fujiwara, Fumiki Aiso, Katsuyuki Sekine, Norio Ohtani:
Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory. VLSI Technology and Circuits 2023: 1-2

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