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ORCIDEiji Taniguchi
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2020 – today
- 2023
[j8]Satoshi Yoneda, Akihito Kobayashi, Eiji Taniguchi:
An ESL-Cancelling Circuit for a Shunt-Connected Film Capacitor Filter Using Vertically Stacked Coupled Square Loops. IEICE Trans. Commun. 106(12): 1322-1328 (2023)- [j7]Yoshihiro Akeboshi
, Yuzo Tamaki, Eiji Taniguchi:
Wideband Noncontact Voltage Measurement for EMC Applications: Design and Implementation. IEEE Trans. Instrum. Meas. 72: 1-9 (2023)
2010 – 2019
- 2019
- [j6]Akihito Hirai, Koji Tsutsumi, Hideyuki Nakamizo, Eiji Taniguchi, Kenichi Tajima, Kazutomi Mori, Masaomi Tsuru, Mitsuhiro Shimozawa:
A 0.3-to-5.5 GHz Digital Frequency Discriminator IC with Time to Digital Converter and Edge Counter for Instantaneous Frequency Measurement. IEICE Trans. Electron. 102-C(7): 547-557 (2019) - 2017
- [j5]Koji Tsutsumi, Takaya Maruyama, Wataru Yamamoto, Takanobu Fujiwara, Tatsuya Hagiwara, Ichiro Somada, Eiji Taniguchi, Mitsuhiro Shimozawa:
A 15GHz-Band 4-Channel Transmit/Receive RF Core-Chip for High SHF Wide-Band Massive MIMO in 5G. IEICE Trans. Electron. 100-C(10): 825-832 (2017) - 2015
- [j4]Masaomi Tsuru, Kengo Kawasaki, Koji Tsutsumi, Eiji Taniguchi:
Adaptively Phase-Shift Controlled Self-Injection Locked VCO. IEICE Trans. Electron. 98-C(7): 677-684 (2015)
2000 – 2009
- 2009
- [j3]Eiji Taniguchi, Mitsuhiro Shimozawa, Noriharu Suematsu:
A 2 to 5 GHz-Band Self Frequency Dividing Quadrature Mixer Using Current Re-Use Configuration. IEICE Trans. Commun. 92-B(12): 3711-3716 (2009) - 2006
- [j2]Mitsuhiro Shimozawa, Kenichi Maeda, Eiji Taniguchi, Keiichi Sadahiro, Takayuki Ikushima, Tamotsu Nishino, Noriharu Suematsu, Kenji Itoh, Yoji Isota, Tadashi Takagi:
An Even Harmonic Quadrature Mixer with a Simple Filter Configuration and an Integrated LTCC Module for W-CDMA Direct Conversion Receiver. IEICE Trans. Electron. 89-C(4): 473-481 (2006) - 2004
- [j1]Takahiro Ohnakado, Satoshi Yamakawa, Takaaki Murakami, Akihiko Furukawa, Eiji Taniguchi, Hiro-omi Ueda, Noriharu Suematsu, Tatsuo Oomori:
21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs). IEEE J. Solid State Circuits 39(4): 577-584 (2004)
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