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Chan-Kyoung Kim

Chan-Kyong Kim

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affiliation: Samsung Electronics, Hwasung, Korea

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2000 – 2009

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2006
[j2]
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Kyu-Hyoun Kim, Young-Soo Sohn, Chan-Kyoung Kim, Moon-Sook Park, Dong-Jin Lee, Woo-Seop Kim, Changhyun Kim:
A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter. IEEE J. Solid State Circuits 41(1): 127-134 (2006)
2005
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Joseph T. Kennedy, Randy Mooney, Robert Ellis, James E. Jaussi, Shekhar Borkar, Jung-Hwan Choi, Jae-Kwan Kim, Chan-Kyong Kim, Woo-Seop Kim, Chang-Hyun Kim, Soo-In Cho, Steffen Loeffler, Jochen Hoffmann, Wolfgang Hokenmaier, Russ Houghton, Thomas Vogelsang:
A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems. IEEE J. Solid State Circuits 40(1): 233-244 (2005)

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