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Masamichi Suzuki
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2020 – today
- 2023
- [c3]Harumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki:
Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. IRPS 2023: 1-7
2010 – 2019
- 2019
- [c2]Yusuke Higashi
, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell
, Kaustuv Banerjee, Umberto Celano
, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt:
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS 2019: 1-7 - 2017
- [j3]Yusuke Higashi
, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura
, Katsuyuki Fukutani, Kikuo Yamabe:
Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectron. Reliab. 70: 12-21 (2017) - [j2]Takao Marukame, Kodai Ueyoshi, Tetsuya Asai
, Masato Motomura
, Alexandre Schmid
, Masamichi Suzuki, Yusuke Higashi
, Yuichiro Mitani:
Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Trans. Circuits Syst. II Express Briefs 64-II(4): 462-466 (2017) - 2013
- [c1]Masamichi Suzuki, Atsuhiro Kinoshita, Yuichiro Mitani:
Improvement of gate disturb degradation in SONOS FETs for Vth mismatch compensation in CMOS analog circuits. ICICDT 2013: 195-198 - 2010
- [j1]Masamichi Suzuki, Masato Koyama, Atsuhiro Kinoshita:
Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La-Al-O gate dielectrics. Microelectron. Reliab. 50(12): 1920-1923 (2010)
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