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Hyungjong Ko
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2020 – today
- 2024
- [j3]Jinook Jung, Jun-Han Choi, Kyoung-Jun Roh, Jaewoo Park, Won-Mook Lim, Tae-Sung Kim, Han-Ki Jeong, Myoungbo Kwak, Jaeyoun Youn, Jeong-Don Ihm, Changsik Yoo, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko:
A 4 ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3. IEEE J. Solid State Circuits 59(10): 3307-3316 (2024) - [c9]Kyunghwan Min, Jahoon Jin, Soo-Min Lee, Sodam Ju, Jisu Yook, Jihoon Lee, Yunji Hong, Sungsik Park, Sang-Ho Kim, Jongwoo Lee, Hyungjong Ko:
A 20Gb/s/pin Single-Ended PAM-4 Transceiver with Pre/Post-Channel Switching Jitter Compensation and DQS-Driven Biasing for Low-Power Memory Interfaces. VLSI Technology and Circuits 2024: 1-2 - 2023
- [j2]Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee:
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. IEEE J. Solid State Circuits 58(1): 279-290 (2023) - [j1]Hyeongmin Seo, Jiyun Han, Kyungmin Kim, Baek-Jin Lim, EunSeok Shin, Youngdon Choi, Hyungjong Ko, Jung-Hwan Choi, Sang-Hyun Lee, Changsik Yoo, Jaeduk Han:
A 12-Gb/s Baud-Rate Clock and Data Recovery With 75% Phase-Detection Probability by Precoding and Integration-Hold-Reset Frontend. IEEE Trans. Circuits Syst. II Express Briefs 70(2): 411-415 (2023) - [c8]Jinook Jung, Jun-Han Choi, Kyoung-Jun Roh, Jaewoo Park, Won-Mook Lim, Tae-Sung Kim, Han-Ki Jeong, Myoungbo Kwak, Jaeyoun Youn, Jeong-Don Ihm, Changsik Yoo, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko:
A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3. A-SSCC 2023: 1-3 - 2022
- [c7]Joohwan Kim, Junyoung Park, Jindo Byun, Changkyu Seol, Chang Soo Yoon, EunSeok Shin, Hyunyoon Cho, Youngdo Um, Sucheol Lee, Hyungmin Jin, Kwangseob Shin, Hyunsub Norbert Rie, Minsu Jung, Jin-Hee Park, Go-Eun Cha, Minjae Lee, YoungMin Kim, Byeori Han, Yuseong Jeon, Jisun Lee, Hyejeong So, Sungduk Kim, Wansoo Park, Tae Young Kim, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko, Sang-Hyun Lee:
A 60-Gb/s/pin single-ended PAM-4 transmitter with timing skew training and low power data encoding in mimicked 10nm class DRAM process. CICC 2022: 1-2 - [c6]Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, Chulhee Cho, Sanghoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoungjoo Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil-Youna Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, ChanYong Lee, Seungseob Lee, TaeHoon Park, Chi Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, SangJoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee:
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus. ISSCC 2022: 446-448 - [c5]Hyunsub Norbert Rie, Chang Soo Yoon, Jindo Byun, Sucheol Lee, Garam Kim, Joohwan Kim, Junyoung Park, Hyunyoon Cho, Youngdo Um, Hyungmin Jin, Kwangseob Shin, Minsu Jung, Go-Eun Cha, Minjae Lee, YoungMin Kim, Byeori Han, Yuseong Jeon, Jisun Lee, EunSeok Shin, Hyuk-Jun Kwon, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko:
A 40-Gb/s/pin Low-Voltage POD Single-Ended PAM-4 Transceiver with Timing Calibrated Reset-less Slicer and Bidirectional T-Coil for GDDR7 Application. VLSI Technology and Circuits 2022: 148-149 - 2021
- [c4]Hyungmin Jin, Jindo Byun, Hyunyoon Cho, Hojun Yoon, Jin-Hee Park, Kyoungsoo Kim, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko, Sang-Hyun Lee:
A 24Gb/s/pin PAM-4 Built Out Tester chip enabling PAM-4 chips test with NRZ interface ATE. A-SSCC 2021: 1-3 - [c3]Hojun Yoon, Wonjoo Jung, Jaewoo Park, Jindo Byun, Hyungmin Jin, Hyunyoon Cho, Youngmin Kim, Baek-Jin Lim, Young-Chul Cho, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko, Changsik Yoo, Sang-Hyun Lee:
A 3.2-12.8Gb/s Duty-Cycle Compensating Quadrature Error Corrector for DRAM Interfaces, With Fast Locking and Low Power Characteristics. ESSCIRC 2021: 463-466 - 2020
- [c2]Si Hoon Lee, Kwangmin Park, Jaeheung Lim, Minchul Lee, Jeongho Park, Hyun Kim, Young Ok Lee, Hyun Su Ahn, Eunseok Shin, Hyungjong Ko, Seoung-Jae Yoo, Hyunsurk Ryu, Yongin Park, Joonseok Kim, Long Yan:
20.3 A 4.0×3.7×1.0mm3-MEMS CMOS Integrated E-Nose with Embedded 4×Gas Sensors, a Temperature Sensor and a Relative Humidity Sensor. ISSCC 2020: 316-318
2010 – 2019
- 2019
- [c1]Kwanyeob Chae, JongRyun Choi, Hyungkwon Lee, Jinho Choi, Shinyoung Yi, Yoonjee Nam, Sangyun Hwang, Joohyung Lee, Won Lee, Kihwan Seong, Joohee Shin, Soo-Min Lee, Seokkyun Ko, Jihun Oh, Billy Koo, Sanghune Park, Jongshin Shin, Hyungjong Ko:
An 8nm All-Digital 7.3Gb/s/pin LPDDR5 PHY with an Approximate Delay Compensation Scheme. VLSI Circuits 2019: 96-
Coauthor Index
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last updated on 2024-10-18 20:27 CEST by the dblp team
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