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Lihua Dai
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2020 – today
- 2022
- [j9]Jin Gao
, Lihua Dai
:
Anti-Periodic Synchronization of Clifford-Valued Neutral-Type Recurrent Neural Networks With D Operator. IEEE Access 10: 9519-9528 (2022) - [j8]Jin Gao
, Lihua Dai:
Anti-periodic solutions of Clifford-valued fuzzy cellular neural networks with delays. Comput. Appl. Math. 41(8) (2022) - 2021
- [j7]Yuanyuan Hou, Lihua Dai
:
S-Asymptotically ω-Periodic Solutions of Fractional-Order Complex-Valued Recurrent Neural Networks With Delays. IEEE Access 9: 37883-37893 (2021) - [c1]Lihua Dai, Qingqing Shi:
Intelligent Grasping Method of Multi-joint Manipulator Based on Deep Learning. ICISCAE (IEEE) 2021: 394-398 - 2020
- [j6]Xiaonian Liu, Lihua Dai, Pingliang Li, Shichang Zou:
Electrical performance of 130 nm PD-SOI MOSFET with diamond layout. Microelectron. J. 99: 104428 (2020)
2010 – 2019
- 2018
- [j5]Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou:
A novel highly reliable and low-power radiation hardened SRAM bit-cell design. IEICE Electron. Express 15(3): 20171129 (2018) - [j4]Zhiyuan Hu, Lihua Dai, Zhengxuan Zhang, Xiaoyun Li, Shichang Zou:
Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide. IEICE Electron. Express 15(4): 20171236 (2018) - 2017
- [j3]Lei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou:
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology. Microelectron. Reliab. 74: 1-8 (2017) - [j2]Lihua Dai
, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou:
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. Microelectron. Reliab. 74: 74-80 (2017) - 2016
- [j1]Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng
, Lei Song, Lihua Dai:
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. Microelectron. Reliab. 56: 1-9 (2016)
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