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Kyungjun Cho
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2020 – today
- 2024
- [j4]Sungweon Hong, Yunseob Tae, Dongjun Lee, Gijin Park, Jaemyung Lim, Kyungjun Cho, Chunseok Jeong, Myeong-Jae Park, Songnam Hong, Jaeduk Han:
Analog Circuit Design Automation via Sequential RL Agents and Gm/ID Methodology. IEEE Access 12: 104473-104489 (2024) - [c5]Jinhyung Lee, Kyungjun Cho, Chang Kwon Lee, Yeonho Lee, Jae-Hyung Park, Su-Hyun Oh, Yucheon Ju, Chunseok Jeong, Ho Sung Cho, Jaeseung Lee, Tae-Sik Yun, Jin Hee Cho, Sangmuk Oh, Junil Moon, Young-Jun Park, Hong-Seok Choi, In-Keun Kim, Seung Min Yang, Sun-Yeol Kim, Jaemin Jang, Jinwook Kim, Seong-Hee Lee, Younghyun Jeon, Juhyung Park, Tae-Kyun Kim, Dongyoon Ka, Sanghoon Oh, Jinse Kim, Junyeol Jeon, Seonhong Kim, Kyeong Tae Kim, Taeho Kim, Hyeonjin Yang, Dongju Yang, Minseop Lee, Heewoong Song, Dongwook Jang, Junghyun Shin, Hyunsik Kim, Chang-Ki Baek, Hajun Jeong, Jongchan Yoon, Seung-Kyun Lim, Kyo Yun Lee, Young Jun Koo, Myeong-Jae Park, Joohwan Cho, Jonghwan Kim:
13.4 A 48GB 16-High 1280GB/s HBM3E DRAM with All-Around Power TSV and a 6-Phase RDQS Scheme for TSV Area Optimization. ISSCC 2024: 238-240 - 2023
- [j3]Myeong-Jae Park, Jinhyung Lee, Kyungjun Cho, Ji Hwan Park, Junil Moon, Sung-Hak Lee, Tae-Kyun Kim, Sanghoon Oh, Seokwoo Choi, Yongsuk Choi, Ho Sung Cho, Tae-Sik Yun, Young Jun Koo, Jae-Seung Lee, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Kyo Yun Lee, Sang-Hoon Lee, Woo Sung We, Seungchan Kim, Seung Min Yang, Keonho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Seonyeol Kim, Dong-Yeol Lee, Su-Hyun Oh, Junghyun Shin, Yeonho Lee, Jieun Jang, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. IEEE J. Solid State Circuits 58(1): 256-269 (2023) - 2022
- [c4]Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun, Sangjin Byeon, Young Jun Koo, Sang-Sic Yoon, Dong-Uk Lee, Seokwoo Choi, Ji Hwan Park, Jinhyung Lee, Kyungjun Cho, Junil Moon, Byung Kuk Yoon, Young Jun Park, Sangmuk Oh, Chang Kwon Lee, Tae-Kyun Kim, Seong-Hee Lee, Hyun-Woo Kim, Yucheon Ju, Seung-Kyun Lim, Seung Geun Baek, Kyo Yun Lee, Sang Hun Lee, Woo Sung We, Seungchan Kim, Yongseok Choi, Seong-Hak Lee, Seung Min Yang, Gunho Lee, In-Keun Kim, Younghyun Jeon, Jae-Hyung Park, Jong Chan Yun, Chanhee Park, Sun-Yeol Kim, Sungjin Kim, Dong-Yeol Lee, Su-Hyun Oh, Taejin Hwang, Junghyun Shin, Yunho Lee, Hyunsik Kim, Jaeseung Lee, Youngdo Hur, Sangkwon Lee, Jieun Jang, Junhyun Chun, Joohwan Cho:
A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization. ISSCC 2022: 444-446
2010 – 2019
- 2019
- [j2]Seongsoo Lee, Donghyun Kim, Yeonje Cho, Hongseok Kim, Chiuk Song, Seungtaek Jeong, Jinwook Song, Gyeyoung Park, Seokwoo Hong, Junyong Park, Kyungjun Cho, Hyunsuk Lee, Chulhun Seo, Seungyoung Ahn, Joungho Kim:
Low Leakage Electromagnetic Field Level and High Efficiency Using a Novel Hybrid Loop-Array Design for Wireless High Power Transfer System. IEEE Trans. Ind. Electron. 66(6): 4356-4367 (2019) - 2018
- [j1]Min Suk Kim, Markondeya Raj Pulugurtha, Youngwoo Kim, Gapyeol Park, Kyungjun Cho, Vanessa Smet, Venky Sundaram, Joungho Kim, Rao R. Tummala:
Miniaturized and high-performance RF packages with ultra-thin glass substrates. Microelectron. J. 77: 66-72 (2018) - 2016
- [c3]Subin Kim, Youngwoo Kim, Kyungjun Cho, Jinwook Song, Joungho Kim:
Design and analysis of on-interposer active power distribution network for an efficient simultaneous switching noise suppression in 2.5D IC. 3DIC 2016: 1-5 - 2015
- [c2]Hyunsuk Lee, Kyungjun Cho, Heegon Kim, Sumin Choi, Jaemin Lim, Joungho Kim:
Electrical performance of high bandwidth memory (HBM) interposer channel in terabyte/s bandwidth graphics module. 3DIC 2015: TS2.2.1-TS2.2.4 - [c1]Sumin Choi, Heegon Kim, Daniel H. Jung, Jonghoon J. Kim, Jaemin Lim, Hyunsuk Lee, Kyungjun Cho, Joungho Kim, Hyungsoo Kim, Yong-Ju Kim, Yunsaing Kim:
Crosstalk-included eye-diagram estimation for high-speed silicon, organic, and glass interposer channels on 2.5D/3D IC. 3DIC 2015: TS8.25.1-TS8.25.5
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