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Pilin Junsangsri
Person information
- affiliation: Northeastern University, Boston, MA, USA
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2010 – 2019
- 2018
- [c12]Pilin Junsangsri, Fabrizio Lombardi:
Multiple Fault Detection in Nano Programmable Logic Arrays. DFT 2018: 1-6 - [c11]Linbin Chen, Pilin Junsangsri, Pedro Reviriego, Fabrizio Lombardi:
CCE: A Combined SRAM and Non Volatile Cache for Endurance of Next Generation Multilevel Non Volatile Memories in Embedded Systems. NANOARCH 2018: 58-64 - 2017
- [c10]Pilin Junsangsri, Fabrizio Lombardi, Salin Junsangsri, Martin Margala:
Design of a Low-Power Non-Volatile Programmable Inverter Cell for COGRE-based Circuits. ACM Great Lakes Symposium on VLSI 2017: 11-16 - 2016
- [j3]Pilin Junsangsri, Jie Han, Fabrizio Lombardi:
Design of a hybrid non-volatile SRAM cell for concurrent SEU detection and correction. Integr. 52: 156-167 (2016) - [j2]Pilin Junsangsri, Jie Han, Fabrizio Lombardi:
Logic-in-Memory With a Nonvolatile Programmable Metallization Cell. IEEE Trans. Very Large Scale Integr. Syst. 24(2): 521-529 (2016) - 2015
- [j1]Pilin Junsangsri, Jie Han, Fabrizio Lombardi:
Circuits for a Perpendicular Magnetic Anisotropic (PMA) Racetrack Memory. IEEE Trans. Multi Scale Comput. Syst. 1(3): 127-137 (2015) - [c9]Pilin Junsangsri, Fabrizio Lombardi, Jie Han:
A Ternary Content Addressable Cell Using a Single Phase Change Memory (PCM). ACM Great Lakes Symposium on VLSI 2015: 259-264 - 2014
- [c8]Pilin Junsangsri, Fabrizio Lombardi, Jie Han:
A hybrid non-volatile SRAM cell with concurrent SEU detection and correction. DATE 2014: 1-4 - [c7]Pilin Junsangsri, Jie Han, Fabrizio Lombardi:
A system-level scheme for resistance drift tolerance of a multilevel phase change memory. DFT 2014: 63-68 - [c6]Pilin Junsangsri, Fabrizio Lombardi, Jie Han:
A memristor-based TCAM (Ternary Content Addressable Memory) cell. NANOARCH 2014: 1-6 - [c5]Pilin Junsangsri, Fabrizio Lombardi, Jie Han:
HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design. NANOARCH 2014: 45-50 - 2012
- [c4]Pilin Junsangsri, Fabrizio Lombardi:
A memristor-based TCAM (ternary content addressable memory) cell: design and evaluation. ACM Great Lakes Symposium on VLSI 2012: 311-314 - [c3]Pilin Junsangsri, Fabrizio Lombardi, Jie Han:
Macromodeling a phase change memory (PCM) cell by HSPICE. NANOARCH 2012: 77-84 - 2011
- [c2]Pilin Junsangsri, Fabrizio Lombardi:
A memristor-based memory cell using ambipolar operation. ICCD 2011: 148-153 - 2010
- [c1]Pilin Junsangsri, Fabrizio Lombardi:
Time/Temperature Degradation of Solar Cells under the Single Diode Model. DFT 2010: 240-248
Coauthor Index
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