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Publication search results
found 14 matches
- 2023
- Wuying Ma, Xiaoping Ouyang, Hongxia Guo, Pei Li, Baoping He, Zujun Wang, Shilong Gou, Yuanyuan Xue:
Impact of thermal baking before radiation on the total dose response of bipolar device. Microelectron. J. 135: 105764 (2023) - Daisuke Bamba, Minoru Watanabe, Nobuya Watanabe:
Total-Ionizing-Dose Tolerance Analysis of a Radiation-Hardened Image Sensor. ICCE 2023: 1-2 - 2020
- Windy S. Slater, Nayana P. Tiwari, Tyler M. Lovelly, Jesse K. Mee:
Total Ionizing Dose Radiation Testing of NVIDIA Jetson Nano GPUs. HPEC 2020: 1-3 - 2019
- X. Ge, Wen Gao, Feng Xu, Chen Zhao, Yang Zhao, X. Li, D. Jiang, H. Liu, Y. Li, G. Sun:
Total-ionization-dose characterization of a radiation-hardened mixed-signal microcontroller SoC in 180 nm CMOS technology for nanosatellites. Microelectron. J. 87: 65-72 (2019) - 2018
- Zhiyuan Hu, Lihua Dai, Zhengxuan Zhang, Xiaoyun Li, Shichang Zou:
Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide. IEICE Electron. Express 15(4): 20171236 (2018) - Olarewaju Mubashiru Lawal, Shuhuan Liu, Zhuoqi Li, Aqil Hussain:
60Co gamma radiation total ionizing dose combined with conducted electromagnetic interference studies in BJTs. Microelectron. Reliab. 82: 159-164 (2018) - 2017
- Minru Hao, Huiyong Hu, Chen-Guang Liao, Haiyan Kang, Han Su, Qian Zhang, Yingbo Zhao:
Total ionizing dose radiation effect on the threshold voltage for the uniaxial strained Si nano NMOSFET. IEICE Electron. Express 14(11): 20170411 (2017) - Minru Hao, Huiyong Hu, Chen-Guang Liao, Bin Wang, Haiyan Kang, He-Ming Zhang:
Influence of γ-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET. Microelectron. Reliab. 75: 69-76 (2017) - 2016
- Zujun Wang, Baoping He, Wuying Ma, Zhibin Yao, Shaoyan Huang, Minbo Liu, Jiangkun Sheng:
Evaluation of the Degradation on a COTS Linear CCD Induced by Total Ionizing Dose Radiation Damage. J. Sensors 2016: 9604042:1-9604042:6 (2016) - Wen-Ching Hsieh, Hao-Tien Daniel Lee, Fuh-Cheng Jong, Shich-Chuan Wu:
Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS. Sensors 16(4): 450 (2016) - Ran Zheng, Jia Wang:
Dark current analysis of P-type and N-type pixels under total ionizing dose radiation effects. APCCAS 2016: 499-501 - 2014
- Xiao-liang Yang, Ying Wang, Bin Du, Cheng-Hao Yu:
Total dose radiation effects of hybrid bulk/SOI CMOS active pixel with buried channel SOI source follower. Microelectron. J. 45(4): 477-481 (2014) - Joseph S. Chang, Kwen-Siong Chong, Wei Shu, Tong Lin, Jize Jiang, Ne Kyaw Zwa Lwin, Yang Kang:
Radiation-hardened library cell template and its total ionizing dose (TID) delay characterization in 65nm CMOS process. MWSCAS 2014: 821-824 - 2011
- Juliano Benfica, Letícia Maria Bolzani Poehls, Fabian Vargas, José Lipovetzky, Ariel Lutenberg, Sebastián E. García, Edmundo Gatti, Fernando Hernandez, Ney Laert Vilar Calazans:
Configurable platform for IC combined tests of total-ionizing dose radiation and electromagnetic immunity. LATW 2011: 1-6
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