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BibTeX record conf/isqed/NiiYFTIMM13
@inproceedings{DBLP:conf/isqed/NiiYFTIMM13, author = {Koji Nii and Makoto Yabuuchi and Hidehiro Fujiwara and Yasumasa Tsukamoto and Yuichiro Ishii and Tetsuya Matsumura and Yoshio Matsuda}, title = {A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53{\%} standby leakage with multi-Vt asymmetric halo {MOS} and write assist circuitry}, booktitle = {International Symposium on Quality Electronic Design, {ISQED} 2013, Santa Clara, CA, USA, March 4-6, 2013}, pages = {438--441}, publisher = {{IEEE}}, year = {2013}, url = {https://doi.org/10.1109/ISQED.2013.6523648}, doi = {10.1109/ISQED.2013.6523648}, timestamp = {Wed, 16 Oct 2019 14:14:55 +0200}, biburl = {https://dblp.org/rec/conf/isqed/NiiYFTIMM13.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
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