


default search action
"A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage ..."
Koji Nii et al. (2013)
- Koji Nii, Makoto Yabuuchi, Hidehiro Fujiwara, Yasumasa Tsukamoto, Yuichiro Ishii, Tetsuya Matsumura, Yoshio Matsuda:
A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry. ISQED 2013: 438-441

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.