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Publication search results
found 65 matches
- 2021
- David Wolpert
, Christopher J. Berry
, Brian Bell, Adam Jatkowski, Jesse Surprise, John Isakson, Ofer Geva, Brian Deskin, Mark Cichanowski, Dina Hamid, Chris Cavitt, Gregory Fredeman, Dinesh Kannambadi, Anthony Saporito
, Ashutosh Mishra, Alper Buyuktosunoglu
, Tobias Webel
, Preetham Lobo, Ramon Bertran
, Pradeep Bhadravati Parashurama
, Dureseti Chidambarrao, Brandon Bruen, Alan P. Wagstaff, Eric Lukes
, Sean M. Carey, Hunter F. Shi, Michael Romain
, Paul Logsdon, Ishita Agarwal
:
Cores, Cache, Content, and Characterization: IBM's Second Generation 14-nm Product, z15. IEEE J. Solid State Circuits 56(1): 98-111 (2021) - 2020
- Sai Li, Jianwei Han, Rui Chen, Shipeng Shangguan, Yingqi Ma, Xuan Wang:
Study on the single-event upset sensitivity of 65-nm CMOS sequential logic circuit. IEICE Electron. Express 17(10): 20200102 (2020) - Liang Wen
, Longmei Nan, Jing Zhang, Chunning Meng, Yan Lu, Shiqian Qi, Jianping Lv, Yuejun Zhang:
65 nm sub-threshold logic standard cell library using quasi-Schmitt-trigger design scheme and inverse narrow width effect aware sizing. IET Circuits Devices Syst. 14(3): 303-310 (2020) - Jingcheng Wang
, Xiaowei Wang
, Charles Eckert
, Arun Subramaniyan
, Reetuparna Das, David T. Blaauw
, Dennis Sylvester
:
A 28-nm Compute SRAM With Bit-Serial Logic/Arithmetic Operations for Programmable In-Memory Vector Computing. IEEE J. Solid State Circuits 55(1): 76-86 (2020) - Rohit Grover, T. Acosta, C. AnDyke, Emre Armagan, C. Auth, Sunny Chugh, K. Downes, M. Hattendorf, N. Jack, S. Joshi, R. Kasim, Gerald S. Leatherman, S.-H. Lee, C.-Y. Lin, A. Madhavan, H. Mao, A. Lowrie, G. Martin, G. McPherson, P. Nayak, A. Neale, D. Nminibapiel, Benjamin Orr, James Palmer, C. M. Pelto, S. S. Poon, I. Post, T. Pramanik, A. Rahman, S. Ramey, N. Seifert, K. Sethi, Anthony Schmitz, H. Wu, A. Yeoh:
A Reliability Overview of Intel's 10+ Logic Technology. IRPS 2020: 1-6 - Motoi Ichihashi, Jia Zeng, Youngtag Woo, Xuelian Zhu, Chenchen Wang, James Mazza:
Performance Boost Scheme with Activated Dummy Fin in 12-nm FinFET Technology for High-Performance Logic Application. ISQED 2020: 196 - Semiu A. Olowogemo, Ahmed Yiwere, Bor-Tyng Lin, Hao Qiu, William H. Robinson, Daniel B. Limbrick:
Electrical Masking Improvement with Standard Logic Cell Synthesis Using 45 nm Technology Node. MWSCAS 2020: 619-622 - 2019
- Juntao Wang, Pengfei He, Yan-Hong She:
Monadic NM-algebras. Log. J. IGPL 27(6): 812-835 (2019) - Yi-Chun Shih
, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time. IEEE J. Solid State Circuits 54(4): 1029-1038 (2019) - Ramiro Taco
, Itamar Levi, Marco Lanuzza
, Alexander Fish:
An 88-fJ/40-MHz [0.4 V]-0.61-pJ/1-GHz [0.9 V] Dual-Mode Logic 8 × 8 bit Multiplier Accumulator With a Self-Adjustment Mechanism in 28-nm FD-SOI. IEEE J. Solid State Circuits 54(2): 560-568 (2019) - Kodai Ueyoshi
, Kota Ando
, Kazutoshi Hirose, Shinya Takamaeda-Yamazaki, Mototsugu Hamada, Tadahiro Kuroda
, Masato Motomura
:
QUEST: Multi-Purpose Log-Quantized DNN Inference Engine Stacked on 96-MB 3-D SRAM Using Inductive Coupling Technology in 40-nm CMOS. IEEE J. Solid State Circuits 54(1): 186-196 (2019) - Yun Yin
, Yiting Zhu, Liang Xiong, Wei Luo, Bowen Chen, Tong Li
, Na Yan
, Hongtao Xu:
A Compact Transformer-Combined Polar/Quadrature Reconfigurable Digital Power Amplifier in 28-nm Logic LP CMOS. IEEE J. Solid State Circuits 54(3): 709-719 (2019) - Daniel Morrison
, Dennis Delic, Mehmet Rasit Yuce
, Jean-Michel Redoute
:
Multistage Linear Feedback Shift Register Counters With Reduced Decoding Logic in 130-nm CMOS for Large-Scale Array Applications. IEEE Trans. Very Large Scale Integr. Syst. 27(1): 103-115 (2019) - Moon-Chul Choi, Haram Ju, Han-Gon Ko, Deog-Kyoon Jeong:
A Design of Data Path Based on CMOS Logic for a 72-Gb/s PAM-4 Transmitter in 28-nm CMOS. ICEIC 2019: 1-4 - Jun Furuta, Yuto Tsukita, Kodai Yamada, Mitsunori Ebara, Kentaro Kojima, Kazutoshi Kobayashi:
Impact of Combinational Logic Delay for Single Event Upset on Flip Flops in a 65 nm FDSOI Process. IRPS 2019: 1-4 - Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Makoto Yabuuchi, Yasumasa Tsukamoto, Koji Shibutani:
Study of Local BTI Variation and its Impact on Logic Circuit and SRAM in 7 nm Fin-FET Process. IRPS 2019: 1-6 - Ramiro Taco, Itamar Levi, Marco Lanuzza
, Alexander Fish:
Live Demo: An 88fJ / 40 MHz [0.4V] - 0.61pJ / 1GHz [0.9V] Dual Mode Logic 8×8-Bit Multiplier Accumulator with a Self-Adjustment Mechanism in 28 nm FD-SOI. ISCAS 2019: 1 - Joao Pedro Cerqueira, Jieyu Li, Jiangyi Li, Weifeng He, Mingoo Seok:
A Femto/Pico-Watt Feedforward Leakage Self-Suppression Logic Family in 180 nm to 28 nm Technologies. MWSCAS 2019: 1049-1052 - Ramakant Ramakant, Sanjay Vidhyadharan, A. Krishna Shyam, Mohit P. Hirpara, Tanmay Chaudhary, Surya Shankar Dan:
Novel Low and High Threshold TFET Based NTI and PTI Cells Benchmarked with Standard 45 nm CMOS Technology for Ternary Logic Applications. VLSI Design 2019: 419-424 - Bart Bogaerts
, Esra Erdem, Paul Fodor, Andrea Formisano, Giovambattista Ianni, Daniela Inclezan, Germán Vidal, Alicia Villanueva, Marina De Vos, Fangkai Yang:
Proceedings 35th International Conference on Logic Programming (Technical Communications), ICLP 2019 Technical Communications, Las Cruces, NM, USA, September 20-25, 2019. EPTCS 306, 2019 [contents] - 2018
- S. Badrudduza, G. Abeln, T. Jew, P. Grudowski, A. Roy, C. Cavins:
Automotive Reliable Memories Integrated into an Ultra-Low Power 40 nm CMOS Logic Process. J. Low Power Electron. 14(3): 393-403 (2018) - Yuejun Zhang, Dailu Ding, Zhao Pan, Pengjun Wang, Qiaoyan Yu:
An ultra-low power multiplier using multi-valued adiabatic logic in 65 nm CMOS process. Microelectron. J. 78: 26-34 (2018) - Robert Giterman
, Alexander Fish, Andreas Burg
, Adam Teman
:
A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(4): 1245-1256 (2018) - Semiu A. Olowogemo, William H. Robinson
, Daniel B. Limbrick:
Effects of Voltage and Temperature Variations on the Electrical Masking Capability of Sub-65 nm Combinational Logic Circuits. DFT 2018: 1-6 - Haruki Mori, Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto:
28-nm FD-SOI Dual-Port SRAM with MSB-Based Inversion Logic for Low-Power Deep Learning. ICECS 2018: 161-164 - F. Griggio, James Palmer, F. Pan, N. Toledo, Anthony Schmitz, I. Tsameret, R. Kasim, Gerald S. Leatherman, J. Hicks, A. Madhavan, J. Shin, J. Steigerwald, A. Yeoh, C. Auth:
Reliability of dual-damascene local interconnects featuring cobalt on 10 nm logic technology. IRPS 2018: 6 - Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Jungman Lim, Seungbae Lee, Hyun-Chul Sagong, Sangwoo Pae:
Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit. IRPS 2018: 1 - 2017
- Yuan Du, Yong Ye, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process. IEICE Electron. Express 14(15): 20170628 (2017) - Michael Gautschi
, Michael Schaffner, Frank K. Gürkaynak, Luca Benini
:
An Extended Shared Logarithmic Unit for Nonlinear Function Kernel Acceleration in a 65-nm CMOS Multicore Cluster. IEEE J. Solid State Circuits 52(1): 98-112 (2017) - Jubal Saji
, Shoaib Kamal:
GDI logic implementation of uniform sized CSLA architectures in 45 nm SOI technology. Microprocess. Microsystems 49: 18-27 (2017)
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