• 
  Nujhat Tasneem, Asif Islam Khan:
  On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device. DRC 2018: 1-2
• 
  Niharika Thakuria, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta:
  2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect Transistors. DRC 2018: 1-2
• 
  Sandeep Krishna Thirumala, Sumeet Kumar Gupta:
  Gate Leakage in Non-Volatile Ferroelectric Transistors: Device-Circuit Implications. DRC 2018: 1-2
• 
  Bassem Tossoun, Geza Kurczveil, Chong Zhang, Di Liang, Raymond G. Beausoleil:
  High-speed 1310 nm Hybrid Silicon Quantum Dot Photodiodes with Ultra-low Dark Current. DRC 2018: 1-2
• 
  Abin Varghese, Denis Joseph, Sayantan Ghosh, Kartikey Thakar, Nikhil Mcdhckar, Saurabh Lodha:
  WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic Applications. DRC 2018: 1-2
• 
  Maud Vinet, Louis Hutin, Benoit Bertrand, Heorhii Bohuslavskyi, Andrea Corna, Anthony Amisse, Alessandro Crippa, Léo Bourdet, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Marc Sanquer, Xavier Jehl, Yann-Michel Niquet, Silvano De Franceschi, Tristan Meunier:
  Towards scalable silicon quantum computing. DRC 2018: 1-2
• 
  Patrick Waltereit, Marina Preschle, Stefan Muller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner:
  A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. DRC 2018: 1-2
• 
  Kang L. Wang:
  Recent Progress in Spintronics and Devices. DRC 2018: 1-2
• 
  Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Chris Youtsey, Robert McCarthy, Louis Guido, Patrick Fay:
  Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage. DRC 2018: 1-2
• 
  Sizhen Wang, Alex Q. Huang:
  High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion Implantation. DRC 2018: 1-2
• 
  H.-S. Philip Wong:
  The End of the Road for 2D Scaling of Silicon CMOS and the Future of Device Technology. DRC 2018: 1-2
• 
  Peng Wu, Jörg Appenzeller:
  High Performance Complementary Black Phosphorus FETs and Inverter Circuits Operating at Record-Low VDD down to 0.2V. DRC 2018: 1-2
• 
  Ting Wu, Abdullah Alharbi, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi:
  Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs. DRC 2018: 1-2
• 
  Zheshun Xiong, Fuu-Jiun Hwang, Dacheng Mao, Geng-Lin Li, Guangyu Xu:
  Color-Filtered Si Photodiode Array for On-Chip Calcium Imaging in Living Cells. DRC 2018: 1-2
• 
  Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
  All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. DRC 2018: 1-2
• 
  Eilam Yalon, Kye Okabe, Christopher M. Neumann, H.-S. Philip Wong, Eric Pop:
  Energy-Efficient Phase Change Memory Programming by Nanosecond Pulses. DRC 2018: 1-2
• 
  Jiancheng Yang, Fan Ren, Marko J. Tadjer, Stephen J. Pearton, Akita Kuramata:
  2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. DRC 2018: 1-2
• 
  Peide D. Ye:
  Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors. DRC 2018: 1
• 
  Handan Yildirim, Ruth Pachter:
  Mechanistic Analysis of Oxygen Vacancy Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures. DRC 2018: 1-2
• 
  Insik Yoon, Muya Chang, Kai Ni, Matthew Jerry, Samantak Gangopadhyay, Gus Henry Smith, Tomer Hamam, Vijayakrishan Narayanan, Justin Romberg, Shih-Lien Lu, Suman Datta, Arijit Raychowdhury:
  A FeFET Based Processing-In-Memory Architecture for Solving Distributed Least-Square Optimizations. DRC 2018: 1-2
• 
  Ke Zeng, Abhishek Vaidya, Uttam Singisetti:
  710 V Breakdown Voltage in Field Plated Ga203 MOSFET. DRC 2018: 1-2
• 
  Junrui Zhang, Francesco Bellando, Maneesha Rupakula, Erick Garcia Cordero, N. Ebejer, J. Longo, Fabien Wildhaber, Hoel Guerin, Adrian Mihai Ionescu:
  CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity. DRC 2018: 1-2
• 
  Yuewei Zhang, Zhanbo Xia, Chandan Joishi, Siddharth Rajan:
  Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET). DRC 2018: 1-2
• 
  Hongwei Zhao, Sergio Pinna, Bowen Song, Ludovico Megalini, Simone Tommaso Suran Brunelli, Larry Coldren, Jonathan Klamkin:
  3 Gbps Free Space Optical Link based on Integrated Indium Phosphide Transmitter. DRC 2018: 1-2
• 
  Ruiping Zhou, Jörg Appenzeller:
  Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs. DRC 2018: 1-2
• 
  Yuqi Zhu, Feng Zhang, Jörg Appenzeller:
  Thickness Tunable Transport Properties in MoTe₂ Field Effect Transistors. DRC 2018: 1-2
• 
  76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. IEEE 2018, ISBN 978-1-5386-3027-3 [contents]

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