- Vihar P. Georgiev:
Development of hierarchical simulation framework for design and optimization of molecular based flash cell. DRC 2018: 1-2 - Adane K. Geremew, Matthew A. Bloodgood, Tina T. Salguero, Sergey Rumyantsev, Alexander A. Balandin:
Unique Features of Electron Transport and Low-Frequency Noise in Quasi-One-Dimensional ZrTe3 van der Waals Nanoribbons. DRC 2018: 1-2 - Shabnam Ghotbi, Hossein Pajouhi, Saeed Mohammadi:
A Vacuum Multi-Finger Transistor in CMOS Technology. DRC 2018: 1-2 - Natasha Goyal, David M. A. Mackenzie, Himani Jawa, Dirch H. Petersen, Saurabh Lodha:
Thermally Aided Nonvolatile Memory Using ReS2 Transistors. DRC 2018: 1-2 - Benjamin Grisafe, Suman Datta:
Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETs. DRC 2018: 1-2 - H. Hahn, H. Yacoub, T. Zweipfennig, G. Lukens, Simon Kotzea, A. Debald, A. N. Oculak, Renato Negra, Holger Kalisch, Andrei Vescan:
Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses. DRC 2018: 1-2 - Sara E. Harrison, Qinghui Shao, Clint D. Frye, Lars F. Voss, Rebecca J. Nikolic:
1.1 kV vertical p-i-n GaN-on-sapphire diodes. DRC 2018: 1-2 - Mina Asghari Heidarlou, B. Jariwala, Paolo Paletti, S. Rouvimov, J. A. Robinsorr, Susan K. Fullerton-Shirey, Alan C. Seabaugh:
Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate. DRC 2018: 1-2 - Markus Hellenbrand, Elvedin Memisevic, Johannes Svensson, A. Krishnaraja, Erik Lind, Lars-Erik Wernersson:
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. DRC 2018: 1-2 - Masataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai:
Recent Advances in Ga2O3 MOSFET Technologies. DRC 2018: 1 - Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Domain Formation in Ferroelectric Negative Capacitance Devices. DRC 2018: 1-2 - Muhammad Mustafa Hussain, Sohail Faizan Shaikh, Galo A. Torres Sevilla, Joanna M. Nassar, Aftab M. Hussain, Rabab R. Bahabry, Sherjeel M. Khan, Arwa T. Kutbee, Jhonathan P. Rojas, Mohamed T. Ghoneim, Melvin Cruz:
Manufacturable Heterogeneous Integration for Flexible CMOS Electronics. DRC 2018: 1-2 - Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser:
Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio. DRC 2018: 1-2 - Ifat Jahangir, Md. Ahsan Uddin, A. K. Singh, A. Franken, M. V. S. Chandrashekha, Goutam Koley:
Surface Passivated InN Nanowire and Graphene Heterojunction Based Memtransistor. DRC 2018: 1-2 - Matthew Jerry, Jeffrey A. Smith, Kai Ni, Atanu Saha, Sumeet Kumar Gupta, Suman Datta:
Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors. DRC 2018: 1-2 - Younghun Jung, Min Sup Choi, Abhinandan Borah, Ankur Nipane, Won Jong Yoo, James Hanel, James T. Teherani:
Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2. DRC 2018: 1-2 - Hirokjyoti Kalita, Adithi Krishnaprasad, Nitin Choudhary, Sonali Das, Hee-Suk Chung, Yeonwoong Jung, Tania Roy:
Artificial Neuron using MoS2/Graphene Threshold Switching Memristors. DRC 2018: 1-2 - Soaram Kim, Sean Gorman, Yongchang Dong, Apparao M. Rao, Goutam Koley:
Self-powered Flexible Strain Sensor with Graphene/P(VDF-TrFE) Heterojunction. DRC 2018: 1-2 - C. Klinkert, A. Szabo, D. Campi, C. Stieger, Nicola Marzari, Mathieu Luisier:
Novel 2-D Materials for Tunneling FETs: an Ab-initio Study. DRC 2018: 1-2 - Sohya Kudoh, Shun'ichiro Ohmi:
Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. DRC 2018: 1-2 - Akash A. Laturia, Maarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe:
Modeling of electron transport in nanoribbon devices using Bloch waves. DRC 2018: 1-2 - Jae Yoon Lee, Youngmin Kim, Ikhyeon Kworn, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho:
Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access Memory. DRC 2018: 1-2 - Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing:
1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. DRC 2018: 1-2 - Kexin Li, Shaloo Rakheja:
A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications. DRC 2018: 1-2 - Dasheng Li, Georg Ramer, Phoebe Yeoh, Brian Hoskins, Yuanzhi Ma, James A. Bain, Andrea Centrone, Marek Skowronski:
Nanoscale Scanning Probe Thermometry of TaOe-based selector devices. DRC 2018: 1-2 - Pai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye:
2D Ferroelectric CuInP2S6: Synthesis, ReRAM, and FeRAM. DRC 2018: 1-2 - Tianning Liu, Jeong Nyeon Kim, Susan E. Trolier-McKinstry, Thomas N. Jackson:
Flexible Thin-Film PZT Ultrasonic Transducers. DRC 2018: 1-2 - Songtao Liu, Justin C. Norman, Daehwan Jung, M. J. Kennedy, Arthur C. Gossard, John E. Bowers:
9 GHz passively mode locked quantum dot lasers directly grown on Si. DRC 2018: 1-2 - Svenja Mauthe, Heinz Schmid, B. Mayer, S. Wirths, Clarissa Convertino, Yannick Baumgartner, Lukas Czornomaz, Marilyne Sousa, P. Staudinger, Heike Riel, Kirsten E. Moselund:
Monolithic Integration of III -V on silicon for photonic and electronic applications. DRC 2018: 1-2 - Connor J. McClellan, Eilam Yalon, Lili Cai, Saurabh Suryavanshi, Xiaolin Zheng, Eric Pop:
Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors. DRC 2018: 1-2