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"Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si ..."

Jeremy R. Watling et al. (2001)

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DOI: 10.1155/2001/63643

access: open

type: Journal Article

metadata version: 2023-09-12

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  dblp key:
  - journals/vlsi/WatlingZAB01
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  - https://dblp.org/rec/journals/vlsi/WatlingZAB01
Jeremy R. Watling, Yan P. Zhao, Asen Asenov, John R. Barker:
Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs. VLSI Design 13(1-4): 169-173 (2001)

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